Simulation Study of GaN/Al1-xGaxN Quantum Well (QW)Operating in the UV Region

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Published: Apr 25, 2019
DOI: https://doi.org/10.21315/
Keywords:
GaN QW, QW thickness, Al1-xGaxN barrier, UV region

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Mohammad Junaebur Rashid
Department of Electrical and Electronic Engineering, Faculty of Engineering and Technology, University of Dhaka, Dhaka 1000, Bangladesh
Abdullah Al Mamun
Department of Electrical and Electronic Engineering, Faculty of Engineering and Technology, University of Dhaka, Dhaka 1000, Bangladesh
Md. Samiul Islam Sadek
Department of Electrical and Electronic Engineering, Southeast University, Dhaka 1208, Bangladesh
Tasnia Hossain
Department of Electrical and Electronic Engineering, University of Asia Pacific, Dhaka 1205, Bangladesh
Hasan Sarwar
Department of Computer Science and Engineering, United International University, Dhaka 1212, Bangladesh

Abstract

This study describes the characteristics of GaN/Al1-xGaxN quantum well (QW) operating in the UV region by varying different parameters. It is well known that the spontaneous and piezoelectric polarisations in wurtzite nitride heterostructures give rise to large built-in electric fields, which leads to an important consequence in the optical properties of GaN/Al1-xGaxN quantum wells. We first modelled the effect of electric field on the calculated electronic band structure. The increase in electric field affected the band structure for a fixed QW and barrier thickness. Then we investigated the effect of QW thickness on the bandgap energy for different electric fields. Afterwards, the Al composition (1-x) and Al1-xGaxN barrier thickness are varied for different well thickness with a fixed electric field.

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How to Cite
Simulation Study of GaN/Al1-xGaxN Quantum Well (QW)Operating in the UV Region. (2019). Journal of Physical Science, 30(1), 25-32. https://doi.org/10.21315/
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Vol. 30 No. 1 (2019)
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Articles
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This work is licensed under a Creative Commons Attribution 4.0 International License.

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