Growth of Bulk Gallium Nitride Single Crystal by Sodium Flux Method: A Brief Review

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Published: Aug 25, 2019
DOI: https://doi.org/10.21315/
Keywords:
Bulk GaN single crystal, sodium flux method, spontaneous nucleation, liquid phase epitaxy, LPE

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Nurul Fatihah Nik Sin
Institute of Nano-Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 USM Pulau Pinang, Malaysia
Kamarulazizi Ibrahim
Institute of Nano-Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 USM Pulau Pinang, Malaysia
Norzaini Zainal
Institute of Nano-Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 USM Pulau Pinang, Malaysia

Abstract

Growing interest in homoepitaxial growth of nitride-based devices has driven considerable efforts towards producing bulk gallium nitride single crystal as a substrate for the devices. Therefore, the process of producing the bulk gallium nitride crystal substrate should be simple and yet cost-effective to reduce the production cost of the devices. To date, several methods of growing bulk gallium nitride crystal have been proposed. Sodium flux method is one of the most promising ways since it requires a moderate growth temperature and growth pressure, as well as being simple and cost-effective. This paper will briefly review the progress made to advance the growth of bulk gallium nitride single crystal by sodium flux method, including discussing challenges and proposing possible improvements in future.

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How to Cite
Growth of Bulk Gallium Nitride Single Crystal by Sodium Flux Method: A Brief Review. (2019). Journal of Physical Science, 30(2), 189-208. https://doi.org/10.21315/
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Vol. 30 No. 2 (2019)
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Articles
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